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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1743TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain The PA1743TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. 1.49 0.21 2.0 0.2 2.9 MAX. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 8 9 4.1 MAX. PA1743TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise noted. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 250 30 8.0 24 26 1.0 150 -55 to +150 8.0 6.4 8.0 V V A A W W C C A mJ A 1.1 0.2 * High voltage: VDSS = 250 V * Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 0.45 MAX. (VGS = 10 V, ID = 4.0 A) * Low input capacitance Ciss = 570 pF TYP. (VDS = 10 V, VGS = 0 V) * Built-in gate protection diode * Small and surface mount package (Power HSOP8) 1.44 TYP. FEATURES 1 5.2 +0.17 -0.2 4 0.8 0.2 S +0.10 -0.05 6.0 0.3 4.4 0.15 0.05 0.05 0.15 1.27 TYP. 0.40 1 +0.10 -0.05 0.10 S 0.12 M 4 EQUIVALENT CIRCUIT Drain Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note4 Note4 PT2 Tch Tstg IAS EAS IAR Gate Body Diode Gate Protection Diode Source Repetitive Avalanche Current Repetitive Pulse Avalanche Energy EAR 6.4 mJ Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on a glass epoxy board of 1 inch x 1 inch x 0.8 mm 3. Starting Tch = 25C, VDD = 125 V, RG = 25 , L = 100 H, VGS = 20 0 V 4. Tch(peak) 150C, L = 100 H Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16371EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2002 PA1743TP ELECTRICAL CHARACTERISTICS (TA = 25C, unless otherwise noted. All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 250 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 125 V, ID = 4.0 A VGS = 10 V RG = 10 MIN. TYP. MAX. 10 10 UNIT A A V S 2.5 3 3.5 5 0.34 570 120 50 12 9 28 8 4.5 Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note 0.45 pF pF pF ns ns ns ns nC nC nC VDD = 200 V VGS = 10 V ID = 8.0 A IF = 8.0 A, VGS = 0 V IF = 8.0 A, VGS = 0 V di/dt = 100 A/s 17 3 9 0.9 140 610 1.5 VF(S-D) trr Qrr V ns nC Note Pulsed: PW 800 s, Duty Cycle 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G16371EJ1V0DS PA1743TP TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise noted. All terminals are connected.) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 30 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 100 25 80 20 60 15 40 10 20 5 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 TC = 25C Single pulse ID(pulse) = 24 A PW = 100 s ID - Drain Current - A 10 ID(DC) = 8.0 A 1 DC RDS(on) Limited (at VGS = 10 V) 0.1 Power Dissipation Limited 0.01 0.1 1 10 100 1000 1 ms 10 ms VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 125C/W 10 Rth(ch-C) = 4.8C/W 1 0.1 Single pulse Rth(ch-A): Mounted on a glass epoxy board of1 inch x 1 inch x 0.8 mm TA = 25C Rth(ch-C): TC = 25C 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16371EJ1V0DS 3 PA1743TP DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 VGS = 10 V Pulsed 25 FORWARD TRANSFER CHARACTERISTICS 100 VDS = 10 V Pulsed 10 ID - Drain Current - A 20 ID - Drain Current - A 1 TA = 150C 125C 75C 25C -25C 15 0.1 10 0.01 5 0.001 0 0 5 10 15 20 25 30 0.0001 0 5 10 15 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed 10 TA = 150C 125C 75C 25C -25C VGS(off) - Gate Cut-off Voltage - V VSD = 10 V ID = 1 mA 4.0 3.5 1 3.0 0.1 2.5 2.0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 100 VGS = 10 V Pulsed RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 ID = 8.0 A 4.0 A 1.6 A Pulsed ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet G16371EJ1V0DS PA1743TP RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss, Coss, Crss - Capacitance - pF VGS = 10 V Pulsed Ciss 1 ID = 7 A 100 3.5 A 0.5 Coss 10 Crss VGS = 0 V f = 1 MHz 0 - 50 1 - 25 0 25 50 75 100 125 150 0.1 1 10 100 1000 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 250 15 ID = 8.0 A 200 VDD = 200 V 125 V 62.5 V 12 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = 125 V VGS = 10 V RG = 0 td(off) td(on) tr tf 150 9 10 100 VGS 6 50 VDS 3 1 0.1 1 10 100 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns IF - Diode Forward Current - A VGS = 0 V Pulsed 10 100 1 10 0.1 di/dt = 100 A/s VGS = 0 V 1 0.01 0 0.25 0.5 0.75 1 1.25 1.5 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet G16371EJ1V0DS 5 VGS - Gate to Source Voltage - V PA1743TP SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 125 V RG = 25 VGS = 20 0 V IAS 8.0 A IAS - Single Avalanche Current - A Energy Derating Factor - % VDD = 125 V VGS = 20 0 V RG = 25 10 IAS = 8.0 A 80 60 EAS = 6.4 mJ 40 1 20 0.1 0.001 0 0.01 0.1 1 10 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - C 6 Data Sheet G16371EJ1V0DS PA1743TP * The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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